The OPA4H014-SEP is a radiation-hardened quad, 11-MHz, low-noise, precision RRIO JFET amplifier in space-enhanced plastic
The OPA4H014-SEP is a low power JFET input operational amplifier (op amp) with good drift and low input bias current. With input ranges that include V– and rail-to-rail outputs, designers can take advantage of the low-noise properties of JFET amplifiers while connecting to a single-supply, precision analog-to-digital converter (ADC) and AM3352BZCZD60 digital-to-analog converter (DAC).
The OPA4H014-SEP achieves a unity-gain bandwidth of 11MHz and a slew rate of 20V/µs while consuming only 1.8mA (typ) of quiescent current. The device operates from a single 4.5-V to 18-V supply or a dual ±2.25-V to ±9-V supply.
Housed in a plastic, 14-pin, TSSOP package, this op amp has radiation hardness up to 43 MeV·cm 2 /mg (SET) and ELDRS up to 30 krad(Si).
characteristic:
●Radiation hardening
○Single even latch (SEL) immunity 43 MeV cm 2 /mg
○ELDRS free to 30 krad(Si)
○ Total ionizing dose (TID) RLAT per wafer lot up to 30 krad(Si)
●Space-enhanced plastic
○Au bonding wire and NiPdAu lead surface treatment
○Reinforced molding compound for low outgassing
○ A manufacturing, assembly and testing site
○ Extend product life cycle
○Extended product change notification
○ Product traceability
Very low offset drift: 1 μV/°C (max)
●Extremely low offset: 120 μV
Low input bias current: 10 pA max
●Low noise: 5.1 nV/√Hz
● Slew rate: 20 V/μs
●Low supply current: 2 mA max
●The input voltage range includes V– power
Wide power supply range: 4.5 V to 18 V
parameter:
Number of channels (#): 4
Total Supply Voltage (Max) (+5V=5, +/-5V=10): 18
Total Supply Voltage (Min) (+5V=5, +/-5V=10): 4.5
Vos (offset voltage @ 25 C) (max) (mV): 0.12
GBW (typ) (MHz): 11
Slew rate (Typ) (V/us): 20
Rail to Rail: Get Out
Offset Drift (Typ) (uV/C): 0.35
Iq (Typ) (mA) per channel: 1.8
Vn (typ) at 1 kHz (nV/rtHz): 5.8
CMRR (typ.) (dB): 140
Operating temperature range (°C): -40 to 125
Input Bias Current (Max) (pA): 10
Architecture: FET
