- भाग संख्या
- IQE006NE2LM5CGATMA1
- उत्पादक
- Infineon Technologies
- श्रेणियाँ
- MOSFET
- RoHS
- विवरण तालिका
- विवरण
- MOSFET TRENCH <= 40V
IQE006NE2LM5CGATMA1
आकृतियां केवल संदर्भ के लिए हैं
विशेष विवरण
- उत्पादक
- Infineon Technologies
- श्रेणियाँ
- MOSFET
- Channel Mode
- Enhancement
- Id - Continuous Drain Current
- 298 A
- Maximum Operating Temperature
- + 150 C
- Minimum Operating Temperature
- - 55 C
- Mounting Style
- SMD/SMT
- Number of Channels
- 1 Channel
- Package / Case
- TTFN-9-1
- Packaging
- Cut Tape, Reel
- Pd - Power Dissipation
- 89 W
- Qg - Gate Charge
- 28.5 nC
- Rds On - Drain-Source Resistance
- 650 uOhms
- Technology
- SI
- Tradename
- OptiMOS
- Transistor Polarity
- N-Channel
- Vds - Drain-Source Breakdown Voltage
- 25 V
- Vgs - Gate-Source Voltage
- - 16 V, + 16 V
- Vgs th - Gate-Source Threshold Voltage
- 2 V
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नवीनतम समीक्षा
Thank you! Received consistent. Long Service. Walking in Russia! Seller recommend!!!
Eitan Hammami
Shipped quickly, it was about 1 weeks in Krasnodar. Until the check operation, but to look at everything together
Sergio Garcia Carreon
High Quality driver, works excellent. It came to Moscow for 7 days.
Mark Abraham S. Goduco
Fast shippng. Good quality. I recomend this seller.
Raymond de Vries
Thank you for the help in the selection of the correct driver, connect, works, not heated perfectly!
สิทธิศักดิ์ วันดี
आपको यह भी पसंद आ सकता हैं
Infineon Technologies
Infineon Technologies
Infineon Technologies
Infineon Technologies
देखने वाले लोग IQE006NE2LM5CGATMA1 तब खरीदे गए
Infineon Technologies
Infineon Technologies
Infineon Technologies
Infineon Technologies
IQE006NE2LM5CGATMA1 समाचार
03/14/2023
03/13/2023
03/09/2023
संबंधित कीवर्ड IQE0 के लिए
- IQE006NE2LM5CGATMA1 को एकीकृत
- IQE006NE2LM5CGATMA1 RoHS
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