भाग संख्या TK040Z65Z,S1F उत्पादक Toshiba श्रेणियाँ MOSFET RoHS विवरण तालिका TK040Z65Z,S1F विवरण MOSFET 360W 1MHz TO-247-4L(T)
उत्पादक Toshiba श्रेणियाँ MOSFET Channel Mode Enhancement Id - Continuous Drain Current 57 A Maximum Operating Temperature + 150 C Minimum Operating Temperature - 55 C Mounting Style Through Hole Number of Channels 1 Channel Package / Case TO-247-4 Packaging Cut Tape, Reel Pd - Power Dissipation 360 W Qg - Gate Charge 105 nC Rds On - Drain-Source Resistance 40 mOhms Technology SI Tradename DTMOSVI Transistor Polarity N-Channel Vds - Drain-Source Breakdown Voltage 650 V Vgs - Gate-Source Voltage - 30 V, + 30 V Vgs th - Gate-Source Threshold Voltage 4 V