भाग संख्या R5009FNX उत्पादक ROHM Semiconductor श्रेणियाँ MOSFET RoHS विवरण तालिका R5009FNX विवरण MOSFET Trans MOSFET N-CH 500V 9A
उत्पादक ROHM Semiconductor श्रेणियाँ MOSFET Channel Mode Enhancement Id - Continuous Drain Current 9 A Maximum Operating Temperature + 150 C Minimum Operating Temperature - 55 C Mounting Style Through Hole Number of Channels 1 Channel Package / Case TO-220FP-3 Packaging Bulk Pd - Power Dissipation 51 W Qg - Gate Charge 18 nC Rds On - Drain-Source Resistance 840 mOhms Technology SI Transistor Polarity N-Channel Vds - Drain-Source Breakdown Voltage 500 V Vgs - Gate-Source Voltage - 30 V, + 30 V Vgs th - Gate-Source Threshold Voltage 4 V