भाग संख्या BVSS138LT1G उत्पादक onsemi श्रेणियाँ MOSFET RoHS विवरण तालिका BVSS138LT1G विवरण MOSFET NFET 50V 200MA 3.5O
उत्पादक onsemi श्रेणियाँ MOSFET Channel Mode Enhancement Id - Continuous Drain Current 200 mA Maximum Operating Temperature + 150 C Minimum Operating Temperature - 55 C Mounting Style SMD/SMT Number of Channels 1 Channel Package / Case SOT-23-3 Packaging Cut Tape, MouseReel, Reel Pd - Power Dissipation 225 mW Qg - Gate Charge - Qualification AEC-Q101 Rds On - Drain-Source Resistance 3.5 Ohms Technology SI Transistor Polarity N-Channel Vds - Drain-Source Breakdown Voltage 50 V Vgs - Gate-Source Voltage - 20 V, + 20 V Vgs th - Gate-Source Threshold Voltage 850 mV