भाग संख्या G3R40MT12J उत्पादक GeneSiC Semiconductor श्रेणियाँ MOSFET RoHS विवरण तालिका G3R40MT12J विवरण MOSFET 1200V 40mO TO-263-7 G3R SiC MOSFET
उत्पादक GeneSiC Semiconductor श्रेणियाँ MOSFET Channel Mode Enhancement Id - Continuous Drain Current 66 A Maximum Operating Temperature + 175 C Minimum Operating Temperature - 55 C Mounting Style SMD/SMT Number of Channels 1 Channel Package / Case TO-263-7 Packaging Tube Pd - Power Dissipation 330 W Qg - Gate Charge 88 nC Rds On - Drain-Source Resistance 40 mOhms Technology SiC Transistor Polarity N-Channel Vds - Drain-Source Breakdown Voltage 1.2 kV Vgs - Gate-Source Voltage - 5 V, + 15 V Vgs th - Gate-Source Threshold Voltage 2.7 V