R5009ANX

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भाग संख्या: R5009ANX

उत्पादक: ROHM Semiconductor

श्रेणियाँ: MOSFET

RoHS

विवरण तालिका: R5009ANX

विवरण: MOSFET Silicon N-channel MOSFET, 10V Drive, N-Channel, Contains G-S protection diode, Low on-resistance, Fast switching, Wide SOA

पीसीबी उद्धरण अब मूल्य प्राप्त करें!

विशेष विवरण

उत्पादक: ROHM Semiconductor

श्रेणियाँ: MOSFET

Channel Mode: Enhancement

Id - Continuous Drain Current: 9 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Mounting Style: Through Hole

Number of Channels: 1 Channel

Package / Case: TO-220FP-3

Packaging: Cut Tape, Reel

Pd - Power Dissipation: 51 W

Qg - Gate Charge: 21 nC

Rds On - Drain-Source Resistance: 550 mOhms

Technology: SI

Transistor Polarity: N-Channel

Vds - Drain-Source Breakdown Voltage: 500 V

Vgs - Gate-Source Voltage: - 30 V, + 30 V

Vgs th - Gate-Source Threshold Voltage: 2.5 V

पोर्च श्रेणी

नवीनतम समीक्षा

अपनी खुद की Reivew लिखें

Product well received and very quickly for France, all is in order in perfect condition. Thank you. I recommend this company.

Dane Gogic

Perfectly.

Sensofar Tech, SL

Shipped quickly, it was about 1 weeks in Krasnodar. Until the check operation, but to look at everything together

Sergio Garcia Carreon

High Quality driver, works excellent. It came to Moscow for 7 days.

Mark Abraham S. Goduco

fast delivery

Mike Ibarra

अधिक

आपको यह भी पसंद आ सकता हैं

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