GS66506T-TR

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भाग संख्या: GS66506T-TR

उत्पादक: GaN Systems

श्रेणियाँ: MOSFET

RoHS

विवरण तालिका: GS66506T-TR

विवरण: MOSFET 650V, 22A, GaN E-mode, GaNPX package, Top-side cooled

पीसीबी उद्धरण अब मूल्य प्राप्त करें!

विशेष विवरण

उत्पादक: GaN Systems

श्रेणियाँ: MOSFET

Channel Mode: Enhancement

Id - Continuous Drain Current: 22.5 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Mounting Style: SMD/SMT

Number of Channels: 1 Channel

Packaging: Reel

Qg - Gate Charge: 4.5 nC

Rds On - Drain-Source Resistance: 90 mOhms

Technology: GaN

Tradename: GaNPX

Transistor Polarity: N-Channel

Vds - Drain-Source Breakdown Voltage: 650 V

Vgs - Gate-Source Voltage: - 10 V, + 7 V

Vgs th - Gate-Source Threshold Voltage: 2.6 V

पोर्च श्रेणी

नवीनतम समीक्षा

अपनी खुद की Reivew लिखें

Properly packed, not damaged. Works well, voltage levels are stable. Recommend.

Paolo Giazzi

Everything as it is written in the description of the same deductible prodovtsu deserved 5

Boris Arshinov

Takes 8 days to Japan. Good!

Alex Fragkos

Hello! Order received, very happy. Thank you very much!

Flavia

Decent quality, not минвелл certainly, but enough decent

TEIXEIRA

अधिक

आपको यह भी पसंद आ सकता हैं

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