भाग संख्या R5021ANX उत्पादक ROHM Semiconductor श्रेणियाँ MOSFET RoHS विवरण तालिका R5021ANX विवरण MOSFET Silicon N-channel MOSFET, 10V Drive, N-Channel, Contains G-S protection diode, Low on-resistance, Fast switching, Wide SOA
उत्पादक ROHM Semiconductor श्रेणियाँ MOSFET Channel Mode Enhancement Id - Continuous Drain Current 21 A Maximum Operating Temperature + 150 C Mounting Style Through Hole Number of Channels 1 Channel Package / Case TO-220FP-3 Packaging Reel Pd - Power Dissipation 50 W Qg - Gate Charge 64 nC Rds On - Drain-Source Resistance 160 mOhms Technology SI Transistor Polarity N-Channel Vds - Drain-Source Breakdown Voltage 500 V Vgs - Gate-Source Voltage - 30 V, + 30 V Vgs th - Gate-Source Threshold Voltage 2.5 V