TK100A06N1,S4X

आकृतियां केवल संदर्भ के लिए हैं

भाग संख्या: TK100A06N1,S4X

उत्पादक: Toshiba

श्रेणियाँ: MOSFET

RoHS

विवरण तालिका: TK100A06N1,S4X

विवरण: MOSFET MOSFET NCh 2.2ohm VGS10V10uAVDS60V

पीसीबी उद्धरण अब मूल्य प्राप्त करें!

विशेष विवरण

उत्पादक: Toshiba

श्रेणियाँ: MOSFET

Channel Mode: Enhancement

Id - Continuous Drain Current: 100 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Mounting Style: Through Hole

Number of Channels: 1 Channel

Package / Case: TO-220-3

Packaging: Tube

Pd - Power Dissipation: 45 W

Qg - Gate Charge: 140 nC

Rds On - Drain-Source Resistance: 2.2 mOhms

Technology: SI

Tradename: U-MOSVIII-H

Transistor Polarity: N-Channel

Vds - Drain-Source Breakdown Voltage: 60 V

Vgs - Gate-Source Voltage: - 20 V, + 20 V

Vgs th - Gate-Source Threshold Voltage: 4 V

पोर्च श्रेणी

नवीनतम समीक्षा

अपनी खुद की Reivew लिखें

everything as it is written in the description of the same deductible prodovtsu deserved

Aleksov

Article fits the description on the website and it is good quality. Free in 5 days in France well protected in a bubble envelope. Each value is row in a small bag zip. Trés satisfied with my purchase, I recommend this article and this supplier.

Kai Hallaren

Takes 8 days to Japan. Good!

Alex Fragkos

fast delivery

Mike Ibarra

The goods are OK, thank you dealers.

CHARLES SANTOS

अधिक

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