TK100A10N1,S4X

आकृतियां केवल संदर्भ के लिए हैं

भाग संख्या: TK100A10N1,S4X

उत्पादक: Toshiba

श्रेणियाँ: MOSFET

RoHS

विवरण तालिका: TK100A10N1,S4X

विवरण: MOSFET MOSFET NCh 3.1ohm VGS10V10uAVDS100V

पीसीबी उद्धरण अब मूल्य प्राप्त करें!

विशेष विवरण

उत्पादक: Toshiba

श्रेणियाँ: MOSFET

Channel Mode: Enhancement

Id - Continuous Drain Current: 100 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Mounting Style: Through Hole

Number of Channels: 1 Channel

Package / Case: TO-220-3

Packaging: Tube

Pd - Power Dissipation: 45 W

Qg - Gate Charge: 140 nC

Rds On - Drain-Source Resistance: 3.1 mOhms

Technology: SI

Tradename: U-MOSVIII-H

Transistor Polarity: N-Channel

Vds - Drain-Source Breakdown Voltage: 100 V

Vgs - Gate-Source Voltage: - 20 V, + 20 V

Vgs th - Gate-Source Threshold Voltage: 4 V

पोर्च श्रेणी

नवीनतम समीक्षा

अपनी खुद की Reivew लिखें

Teşekkürler

Ashir Hussain

it is safe and sound all, thank you seller!

Arturo Madril

Order received all the rules. Ощень мана quickly, to Yakutia 5 day, respect, not tupit. Packed in standard. Driver in the form of niche, soldering standards, not tested. And diode, he ordered. Orders joined fellow

Brenda Gfeller

Perfectly.

Sensofar Tech, SL

High Quality driver, works excellent. It came to Moscow for 7 days.

Mark Abraham S. Goduco

अधिक

आपको यह भी पसंद आ सकता हैं

देखने वाले लोग TK100A10N1,S4X तब खरीदे गए

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